丝印：GT800N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT800N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：676.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT800N10；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The GT800N10I uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：823.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT800N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT800N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：676.58 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT800N10；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The GT800N10I uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：823.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体