丝印：GT880P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.89 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：816.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：868.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15B；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15D5B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：879.67 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15B；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15KB uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：840.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15B；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15TB uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：863.02 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.89 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：816.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：868.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT880P15B；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT880P15D5B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：879.67 Kbytes 页数：6 Pages

GOFORD

谷峰半导体