丝印：GT1K2P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：672.16 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：852.06 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

文件：1.00011 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：948.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：980.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：672.16 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：852.06 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

文件：1.00011 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：948.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT1K2P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The GT1K2P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：980.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体