丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06192 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.20471 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06192 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT600P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT600P15MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.20471 Mbytes 页数：6 Pages

GOFORD

谷峰半导体