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GT600P15M

丝印:GT600P15;Package:TO-263;P-Channel Enhancement Mode Power MOSFET

Description The GT600P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.06192 Mbytes 页数:6 Pages

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谷峰半导体

GT600P15MA

丝印:GT600P15;Package:TO-263;P-Channel Enhancement Mode Power MOSFET

Description The GT600P15MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件:1.20471 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT600P15M

-150V P Channel SGT MOSFET

GOFORD

谷峰半导体

GT600P15MA

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

GT600P15MM

-150V P Channel SGT MOSFET

GOFORD

谷峰半导体

技术参数

  • Package:

    TO-263

  • Type:

    P

  • ESD Diode:

    NO

  • Vds(V):

    -150

  • Vgs(V):

    ±20

  • Id(A):

    -45

  • Pd(W):

    185

  • Vgs(th)max(V):

    -4

  • Rds(on)mΩ(typ)@Vgs=10V:

    55

  • Rds(on)mΩ(max)@Vgs=10V:

    70

  • Qg(nC):

    58

  • Qgs(nC):

    25

  • Qgd(nC):

    6

  • Ciss(pF):

    3950

  • Crss(pF):

    5

  • Technology:

    SGT

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更多GT600P15M供应商 更新时间2026-1-29 16:12:00