丝印：GT52N10；Package：DFN8L-5/6；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.12002 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT52N10；Package：DFN8L-5/6；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.35594 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT52N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：990.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT52N10；Package：DFN8L-5/6；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.12002 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT52N10；Package：DFN8L-5/6；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.35594 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT52N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：990.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体