丝印：GT250P10；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：906.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT250P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.63 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT250P10；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：906.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT250P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.63 Kbytes 页数：6 Pages

GOFORD

谷峰半导体