丝印：GT250P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT250P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.63 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

4V Drive Pch MOSFET

文件：560.12 Kbytes 页数：7 Pages

ROHM

罗姆

4V Drive Pch MOSFET

文件：1.19478 Mbytes 页数：7 Pages

ROHM

罗姆

isc P-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for s

文件：383.8 Kbytes 页数：2 Pages

ISC

无锡固电