丝印：GT2K6P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：775.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K6P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：806.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K6P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：775.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT2K6P15；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The GT2K6P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：806.82 Kbytes 页数：6 Pages

GOFORD

谷峰半导体