丝印：GT55N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：695.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT55N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT55N06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：926.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT55N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：695.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT55N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT55N06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：926.08 Kbytes 页数：6 Pages

GOFORD

谷峰半导体