丝印：GT180P08；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：925.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT180P08；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：895.52 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT180P08；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：920.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT180P08；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：925.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT180P08；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：895.52 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT180P08；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT180P08T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：920.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体