丝印：GT095N10；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：730.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：730.78 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：714.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.042609 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.20733 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：730.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：730.78 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：714.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.042609 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT095N10；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The GT095N10S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.20733 Mbytes 页数：6 Pages

GOFORD

谷峰半导体