丝印：GT100N12；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.043069 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.1114 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03618 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件：1.03544 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04569 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件：1.24804 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.043069 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.1114 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03618 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N12；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT100N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件：1.03544 Mbytes 页数：6 Pages

GOFORD

谷峰半导体