| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：GT100P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET Description The GT100P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：584.3 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：824.12 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：773.74 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT100P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET Description The GT100P06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：584.3 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：824.12 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT100P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：773.74 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
P-Channel Enhancement Mode Power MOSFET Description The GT100P06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：773.74 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILVERMICRO |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
银茂微 |
23+ |
MODULE |
4500 |
专营国产功率器件 |
询价 | ||
HAMAT |
23+ |
SIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Gowanda Electronics |
25+ |
径向 垂直(开放式) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
相关芯片丝印
更多- GT105N10F
- GT105N10K
- GT105N10T
- GT110N06D3
- GT110N06D5A
- GT110N06S
- GT130N10D3
- GT130N10F
- GT130N10M
- GT130N20M
- GT135N10D3
- SN74GTL2014PWR.B
- GT150N12T
- GT180N12K
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- GT1MMA_R1_00001
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- GT2K0P20D5
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- GT2K6P15K
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- GT52N10D5
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- GT55N06D5A
- GT600P15MA
- GT6K2P10IH
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- GT700P08K
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- GT750P10KA
- GT750P10D5
- GT800N10D3
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- SN74GTLP817PWR
- GT880P15D5
- GT880P15T
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- AP2127N-2.5TRG1
- AP3302K6TR-G1
相关库存
更多- GT105N10M
- GT105N10KA
- GT10N10
- GT110N06D3A
- GT110N06M
- GT110N06SH
- GT130N10D3A
- GT130N10K
- GT130N10MA
- GT135N10D3A
- SN74GTL2014PWRG4.B
- SN74GTL2014PWR
- GT15N10
- GT180N12M
- GT180P08D5
- GT180P08T
- GT1K2P15KA
- GT1K2P15M
- GT1K2P15S
- GT240P10M
- GT250P10T
- GT2K0P20M
- GT2K0P20MA
- GT2K0P20T
- GT2K6P15S
- GT400P10M
- GT500P10K
- GT52N10D5A
- GT55N06D5
- GT600P15M
- GT650N15K
- GT6K2P10IHA
- GT700P08D3
- GT700P08S
- GT750P08K
- GT750P10M
- GT750P10K
- GT800N10I
- SN74GTLP817PW.B
- SN74GTLP817DGVR
- GT880P15K
- GT880P15KB
- GT880P15TB
- NGTB03N60R2DT4G
- AP9101CAK6-ACTRG1
