丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.99 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：576.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.99 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT100N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：576.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体