丝印：GT100N04；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT100N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：576.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

N-Channel 4 -V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies

文件：969.13 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.65 Kbytes 页数：2 Pages

ISC

无锡固电