首页 >GT100N04D3>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GT100N04D3 | 丝印:GT100N04;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET Description The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:686.32 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | |
GT100N04D3 | 40V N Channel SGT MOSFET | GOFORD 谷峰半导体 | GOFORD | |
丝印:GT100N04;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET Description The GT100N04D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件:900.99 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro | GOFORD 谷峰半导体 | GOFORD |
技术参数
- Configuration:
N channel
- ESD:
NO
- VDS(min):
40V
- Id at 25℃(max):
13A
- PD(max):
23W
- Vgs(th)typ(V):
1.32V
- RDS(on)(typ)(@10V):
7mΩ
- RDS(on)(typ)(@4.5V):
11mΩ
- Qg(nC):
32
- Ciss:
642
- Crss:
115
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NK/南科功率 |
2025+ |
DFN3*3-8L |
986966 |
国产 |
询价 | ||
VISHAY |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
SILVERMICRO |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
HAMAT |
23+ |
SIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Gowanda Electronics |
25+ |
径向 垂直(开放式) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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