型号：GT065P06D5；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：GT065P06M；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：879.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：GT065P06T；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：622.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：GT065P06D5；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：887.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：GT065P06M；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：879.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

型号：GT065P06T；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT065P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：622.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体