丝印：GT080N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06561 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：952.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13043 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06661 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.2602 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06561 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：952.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13043 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06661 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT080N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT080N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.2602 Mbytes 页数：6 Pages

GOFORD

谷峰半导体