| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：GT090N06；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：904.36 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET Description The GT090N06D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：887.89 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：692.97 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.07666 Mbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET Description The GT110N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：692.93 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：904.36 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：DFN5X6DUAL；DUAL N-Channel Enhancement Mode Power MOSFET Description The GT090N06D52A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：887.89 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：692.97 Kbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印：GT090N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.07666 Mbytes 页数：6 Pages | GOFORD 谷峰半导体 | GOFORD |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOFORD/谷峰 |
25+ |
DFN5x6 |
20300 |
GOFORD/谷峰原装特价GT090N06D52即刻询购立享优惠#长期有货 |
询价 | ||
GOFORD |
2021+ |
DFN5*6 |
12000 |
勤思达 只做原装 现货库存 |
询价 | ||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Goford Semiconductor |
25+ |
8-PowerTDFN |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
GOFORD |
21+ |
DFN5*6 |
1820 |
原装现货假一赔十 |
询价 | ||
NK/南科功率 |
2025+ |
DFN5*6-8L |
986966 |
国产 |
询价 | ||
GOFORD |
23+ |
DFN5*6 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Greenlee |
1935+ |
N/A |
656 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Greenlee |
22+ |
NA |
656 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
SAMXON/万裕 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 |
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相关库存
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