丝印：GT070N15；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：962.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：972.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：980.25 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.2147 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.11012 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：962.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：972.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：980.25 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.2147 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT070N15；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT070N15TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.11012 Mbytes 页数：6 Pages

GOFORD

谷峰半导体