GT040N10T

Marking：GT040N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheGT040N10Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GT040N10M

N-ChannelEnhancementModePowerMOSFET

Description TheGT040N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

NVMFD040N10MCL

MOSFET??Power,DualN-Channel100V,39m,21A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWD040N10MCL−WettableFlankProducts •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

NVMFS040N10MCL

MOSFET??Power,SingleN-Channel100V,38m,21A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •NVMFWS040N10MCL−WettableFlanksProduct •TheseDevicesarePb−Free,HalogenFree/BFRFree,Berylliu

PRM040N10CTB

100VSingleN-ChannelMOSFET

PRM040N10D

100VSingleN-ChannelMOSFET