丝印：PRM040N10CTB；Package：TO-263；100V Single N-Channel MOSFET

文件：850.38 Kbytes 页数：8 Pages

PFC

节能元件

场效应电晶体

PFC

节能元件

100V Single N-Channel MOSFET

文件：847.02 Kbytes 页数：8 Pages

PFC

节能元件

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05967 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD040N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：218.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体