丝印：GT048N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT048N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03131 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT048N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT048N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28225 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT048N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT048N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.03131 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT048N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT048N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28225 Mbytes 页数：6 Pages

GOFORD

谷峰半导体