丝印：GT042P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT042P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT042P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT042P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：947.15 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT042P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The GT042P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT042P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The GT042P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：947.15 Kbytes 页数：6 Pages

GOFORD

谷峰半导体