丝印：GT040N04；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.23445 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01134 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N04I；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：833.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N04；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.23445 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N04；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01134 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N04I；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：833.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体