丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

文件：948.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AQ uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：911.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：909.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Optimized for synchronous rectification

Features • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：621.02 Kbytes 页数：9 Pages

INFINEON

英飞凌