丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

文件：948.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

文件：335.88 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：1.35992 Mbytes 页数：12 Pages

INFINEON

英飞凌