首页 >IPD025N06N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPD025N06N | Optimized for synchronous rectification Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPD025N06N | New OptiMOS??40V and 60V | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD025N06N | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD025N06N | Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
Optimized for synchronous rectification Features •Optimizedforsynchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
Metal Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelPowerTrench짰MOSFET60V,265A,2.5m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=265A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelPowerTrench짰MOSFET60V,265A,2.5m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
PowerMOSFET60V,27.5m,21A,SingleN?묬hannel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
PowerMOSFET60V,27.5m,21A,SingleN?묬hannel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
MOSFET–Power,SingleN-Channel60V,27.5m,21A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
MOSFET–Power,SingleN-Channel60V,27.5m,21A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF025N06NGusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitchi | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 |  |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
INFINEON/英飞凌 |
22+ |
TO-252 |
5000 |
只做原装进口 免费送样!! |
询价 | ||
INFINEON |
21+ |
TO252 |
2500 |
全新原装,价格优势 |
询价 | ||
INFINEON |
21+ |
TO252 |
60000 |
原装正品进口现货 |
询价 | ||
Infineon(英飞凌) |
21+ |
TO252 |
2500 |
原装现货,欢迎来谈! |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI/德州仪器 |
21+ |
TO-252 |
6000 |
全新原装正品 长期现货供应 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
询价 | ||
INFINEON |
22+ |
TO252 |
10000 |
全新原装 支持BOM配单 |
询价 | ||
Infineon英飞凌专营 |
TO252 |
9000 |
原装现货当天可交货,长期备货支持BOM配单账期 |
询价 |
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