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GT035N12M

丝印:GT035N12;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.14301 Mbytes 页数:6 Pages

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GT035N12MA

丝印:GT035N12;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件:1.14091 Mbytes 页数:6 Pages

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谷峰半导体

GT035N12T

丝印:GT035N12;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.14405 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT035N12TA

丝印:GT035N12;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件:1.47013 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT035N12M

丝印:GT035N12;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.14301 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT035N12MA

丝印:GT035N12;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件:1.14091 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT035N12T

丝印:GT035N12;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.14405 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

GT035N12TA

丝印:GT035N12;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The GT035N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

文件:1.47013 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

供应商型号品牌批号封装库存备注价格
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
ICE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
2025+
SOP14
4825
全新原厂原装产品、公司现货销售
询价
FAIRCHILD
2023+
SOP14
50000
全新原装现货
询价
FAIRCHILD
25+
SOP-3.9-14P
2560
绝对原装!现货热卖!
询价
24+
QFP
30
询价
GOFORD(谷峰)
2447
DFN8L-5×6
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
GOFORD
21+
DFN-8L(5X6)
2500
进口原装,优势现货
询价
GOFORD
10
询价
GOFORD
24+
con
10000
查现货到京北通宇商城
询价
更多GT035N12供应商 更新时间2025-9-19 11:06:00