首页 >FGH20N60SFDTU>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IGBTinTRENCHSTOPandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime–5µs •Designedfor: -FrequencyConverters -UninterruptedPowerS | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
DesignedforDC/ACconvertersforAutomotiveApplication LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤220mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltageIGBTwithoptionalDiode VCES=600V IC25=32A VCE(sat)typ=2.2V Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultr | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -easiertodrive -fasterswitching •LowRDS | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -easiertodrive -fasterswitching •LowRDS | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFASTTMIGBT | IXYS IXYS Integrated Circuits Division | IXYS | ||
LowVCE(sat)IGBT,HighspeedIGBT LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat | IXYS IXYS Integrated Circuits Division | IXYS | ||
LowVCE(sat)IGBT,HighspeedIGBT LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS |
产品属性
- 产品编号：
FGH20N60SFDTU
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.8V @ 15V，20A
- 开关能量：
370µJ（开），160µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
13ns/90ns
- 测试条件：
400V，20A，10 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247-3
- 描述：
IGBT FIELD STOP 600V 40A TO247-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
TO-247 |
12680 |
询价 | |||
ON |
22+ |
TO-247-3 |
6000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
询价 | |||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
FAILCHILD |
21+ |
TO-247 |
3000 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
仙童 |
20+ |
NA |
6800 |
询价 | |||
ON |
22+ |
TO-247 |
50 |
原装现正品可看现货 |
询价 | ||
ON |
23+ |
SOT-23-3 |
8000 |
只做原装正品,假一罚十 |
询价 | ||
ON |
2023 |
IJBT |
2000 |
全新、原装 |
询价 | ||
ON(安森美) |
2023+ |
TO-247-3L |
4550 |
全新原装正品 |
询价 |
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