首页 >FGH20N60SFDTU>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FGH20N60SFDTU | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
FGH20N60SFDTU | IGBT - Field Stop 600 V, 20 A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
FGH20N60SFDTU | High current capability, High input impedance | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
FGH20N60SFDTU | 包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 40A TO247-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
IGBT - Field Stop 600 V, 20 A Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 40A TO247-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
20A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division |  | ||
HITACHIEncapsulation,DIP16 | HitachiHitachi, Ltd. 日立公司 |  | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
产品属性
- 产品编号：
FGH20N60SFDTU
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.8V @ 15V，20A
- 开关能量：
370µJ（开），160µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
13ns/90ns
- 测试条件：
400V，20A，10 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247-3
- 描述：
IGBT FIELD STOP 600V 40A TO247-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
TO-247 |
12680 |
询价 | |||
ON |
22+ |
TO-247-3 |
6000 |
原装正品可支持验货,欢迎咨询 |
询价 | ||
onsemi |
23+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
询价 | |||
FAILCHILD |
21+ |
TO-247 |
3000 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
ON/安森美 |
2021+ |
TO-247 |
15500 |
原装正品.假一赔百 |
询价 | ||
ON |
22+ |
SOT-23-3 |
8000 |
原厂原装,实单加微信 |
询价 | ||
ON |
22+ |
SOT-23-3 |
3000 |
只做原装，支持实单，来电咨询。 |
询价 | ||
仙童 |
20+ |
NA |
6800 |
询价 | |||
ON |
22+ |
SOT-23-3 |
3000 |
公司只有原装 |
询价 |
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