DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：FGH20N60SFD；Package：TO-247；IGBT - Field Stop 600 V, 20 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S

文件：812.21 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

High current capability, High input impedance

文件：797.47 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：FGH20N60SFDTU；Package：TO-247；IGBT - Field Stop 600 V, 20 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low S

文件：812.21 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 40A TO247-3

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 40A TO247-3

ONSEMI

安森美半导体