首页 >FGH40N65UFDTU>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FGH40N65UFDTU | 650V, 40A Field Stop IGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FGH40N65UFDTU | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FGH40N65UFDTU | IGBT - Field Stop 650 V, 40 A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’sfield stopIGBTsoffertheoptimumperformanceforAutomotiveChargers, Inverter,andotherapplicationswherelowconductionandswitching lossesareessential. Features •HighCurrentCapability •LowSaturationVolt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
FGH40N65UFDTU | 包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 650V 80A TO247-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
IGBT - Field Stop 650 V, 40 A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’sfield stopIGBTsoffertheoptimumperformanceforAutomotiveChargers, Inverter,andotherapplicationswherelowconductionandswitching lossesareessential. Features •HighCurrentCapability •LowSaturationVolt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 650V 80A TO247-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
NewProducts,TipsandToolsforPowerandMobileApplications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
650V,40AFieldStopIGBT GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
650V40Atrenchgatefieldcut-offtypeIGBT | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
650VN-ChannelsuperjunctionMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
SEMICONDUCTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
TrenchandFieldStopIGBT650V40A Features •Lowswitchinglosses •Maximumjunctiontemperature175°C •Positivetemperaturecoefficient •Highruggedness,temperaturestable •Highshortcircuitcapability(5μs) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCom | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
TrenchandFieldStopIGBT650V40A Features •Lowswitchinglosses •Maximumjunctiontemperature175°C •Positivetemperaturecoefficient •Highruggedness,temperaturestable •Highshortcircuitcapability(5μs) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCom | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
IGBTwithMonolithicReverseConductingDiode ThisInsulatedGateBipolarTransistor(IGBT)featuresrobustand costeffectiveFieldStop(FS2)trenchconstructionwithamonolithic RCDiode.ItprovidesacosteffectiveSolutionforapplicationswhere diodelossesareminimal.TheIGBTisoptimizedforlowconduction losses(lowVCEsat) | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
IGBTwithMonolithicReverseConductingDiode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
产品属性
- 产品编号：
FGH40N65UFDTU
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- IGBT 类型：
场截止
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.4V @ 15V，40A
- 开关能量：
1.19mJ（开），460µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
24ns/112ns
- 测试条件：
400V，40A，10 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247-3
- 描述：
IGBT FIELD STOP 650V 80A TO247-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2024+原装现货 |
TO247 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
询价 | |||
onsemi(安森美) |
23+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ON/安森美 |
21+ |
TO-3P |
60000 |
原装正品进口现货 |
询价 | ||
FSC |
2016+ |
TO-3P |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Fairchild |
23+ |
TO-3P |
7750 |
全新原装优势 |
询价 | ||
FAIRCHILD |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ONSemiconductor |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
FSC |
19+ |
TO-247 |
71352 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 |
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