Hard switching IGBT, TO-247, 650V, 40A

• High speed switching \n• High ruggedness and temperature stable behavior\n• Extremely enhanced avalanche capability;

KEC

开益禧

SEMICONDUCTOR

文件：1.50859 Mbytes 页数：8 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Trench and Field Stop IGBT 650V 40A

Features • Low switching losses • Maximum junction temperature 175°C • Positive temperature coefficient • High ruggedness, temperature stable • High short circuit capability(5μs) • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Com

文件：1.57301 Mbytes 页数：10 Pages

MCC

Trench and Field Stop IGBT 650V 40A

Features • Low switching losses • Maximum junction temperature 175°C • Positive temperature coefficient • High ruggedness, temperature stable • High short circuit capability(5μs) • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Com

文件：1.57301 Mbytes 页数：10 Pages

MCC

IGBT with Monolithic Reverse Conducting Diode

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat)

文件：228.99 Kbytes 页数：9 Pages

ONSEMI

安森美半导体