IGBT with Monolithic Reverse Conducting Diode

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat)

文件：228.99 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 40A

ONSEMI

安森美半导体

IGBT with Monolithic Reverse Conducting Diode

文件：132.89 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel MOSFET uses advanced trench technology

文件：1.56432 Mbytes 页数：5 Pages

DOINGTER

杜因特