MIW40N65RA

Trench and Field Stop IGBT 650V 40A

Features •Lowswitchinglosses •Maximumjunctiontemperature175°C •Positivetemperaturecoefficient •Highruggedness,temperaturestable •Highshortcircuitcapability(5μs) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCom

MIW40N65RA-BP

Trench and Field Stop IGBT 650V 40A

Features •Lowswitchinglosses •Maximumjunctiontemperature175°C •Positivetemperaturecoefficient •Highruggedness,temperaturestable •Highshortcircuitcapability(5μs) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCom

MIW40N65RA-BP

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 40A,TO-247AB

DAM40N65H

N-ChannelEnhancementModeMOSFET

FGA40N65SMD

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FGA40N65SMD

NewProducts,TipsandToolsforPowerandMobileApplications

FGH40N65UFD

650V,40AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE

FGH40N65UFDTU

650V,40AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild®’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features •HighCurrentCapability •LowSaturationVoltage:VCE

FGH40N65UFDTU

IGBT-FieldStop650V,40A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’sfield stopIGBTsoffertheoptimumperformanceforAutomotiveChargers, Inverter,andotherapplicationswherelowconductionandswitching lossesareessential. Features •HighCurrentCapability •LowSaturationVolt

FGH40N65UFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

HMG40N65T

650V40Atrenchgatefieldcut-offtypeIGBT

HMS40N65T

650VN-ChannelsuperjunctionMOSFET

KGF40N65KDC

SEMICONDUCTOR

NGTB40N65IHRTG

IGBTwithMonolithicReverseConductingDiode

ThisInsulatedGateBipolarTransistor(IGBT)featuresrobustand costeffectiveFieldStop(FS2)trenchconstructionwithamonolithic RCDiode.ItprovidesacosteffectiveSolutionforapplicationswhere diodelossesareminimal.TheIGBTisoptimizedforlowconduction losses(lowVCEsat)

NGTB40N65IHRWG

IGBTwithMonolithicReverseConductingDiode

PE40N65

N-ChannelMOSFETusesadvancedtrenchtechnology