Description

Using novel field stop IGBT technology, ON Semiconductor’s field

stop IGBTs offer the optimum performance for Automotive Chargers,

Inverter, and other applications where low conduction and switching

losses are essential.

Features

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A

• High Input Impedance

• Fast Switching

• Qualified to Automotive Requirements of AEC−Q101

(FGH40N65UFDTU−F085)

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Automotive Chargers, Converters, High Voltage Auxiliaries

• Inverters, PFC, UPS

FGH40N65UFDTU属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。安森美半导体公司制造生产的FGH40N65UFDTU晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。