DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半导体

Field Stop IGBT 650 V, 40 A

General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu

文件：373.25 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

New Products, Tips and Tools for Power and Mobile Applications

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FAIRCHILD

仙童半导体

IGBT，650V，40A，场截止

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为太阳能逆变器、UPS、焊机、感应加热、通讯、ESS 和 PFC 等低传导和开关损耗至关重要的应用提供最佳性能。 •最大结温TJ =175 °C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压：VCE(sat) =1.9V（典型值）@ IC = 40A\n•快速开关：EOFF =6.5uJ/A\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Package：TO-3P-3，SC-65-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 650V 80A TO3PN

ONSEMI

安森美半导体