丝印：FGH75T65UPD；Package：TO-247-3；IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

文件：523.85 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH75T65UPD；Package：TO-247；IGBT - Field Stop, Trench 650 V, 75 A

Description Using Novel Field Stop Trench IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features • Maxi

文件：400.77 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FGH75T65UPD；Package：TO-247-3；IGBT – Field Stop, Trench 650 V, 75 A

Description Using innovative field stop trench IGBT technology, onsemi’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperat

文件：523.85 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

650V, 75A Field Stop Trench IGBT

文件：922.83 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

650V, 75A，场截止沟道IGBT

飞兆半导体的新型场截止沟道 IGBT 系列产品采用创新型场截止沟道 IGBT 技术，为光伏逆变器、UPS、焊机和数字功率产生器等低导通和开关损耗至关重要的应用提供了最佳性能。 最大结温：TJ = 175°C\n正温度系数，适合并联运行\n高电流能力\n低饱和电压：VCE(sat) = 1.65V（典型值）@ IC = 75A\n高输入阻抗\n紧密的参数分布\n符合 RoHS 标准\n短路耐用性：25°C 时为 5µs;

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：650V,75A FIELD STOP TRENCH IGBT

ONSEMI

安森美半导体