FGH75T65UPD-F085中文资料安森美半导体数据手册PDF规格书

厂商型号	FGH75T65UPD-F085
功能描述	IGBT - Field Stop, Trench 650 V, 75 A
丝印标识	FGH75T65UPD
封装外壳	TO-247
文件大小	400.77 Kbytes
页面数量	10 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-29 16:49:00
人工找货	FGH75T65UPD-F085价格和库存，欢迎联系客服免费人工找货

描述 Description

Using Novel Field Stop Trench IGBT Technology,

ON Semiconductor’s new series of Field Stop Trench IGBTs offer

the optimum performance for Automotive chargers, Solar Inverter,

UPS and Digital Power Generator where low conduction and

switching losses are essential.

特性 Features

• Maximum Junction Temperature : TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A

• High Input Impedance

• Tightened Parameter Distribution

• AEC−Q101Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Applications

• Automotive Chargers, Converters, High Voltage Auxiliaries

• Solar Inverters, UPS, Digital Power Generator