Designed for DC/AC converters for Automotive Application

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode • Automotive AEC Q101 qualified • Designed for DC/AC converters for Automotive Application • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C

文件：606.62 Kbytes 页数：13 Pages

INFINEON

英飞凌

Designed for DC/AC converters for Automotive Application

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 166W TO247-3

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.22Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.5 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤220mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.88 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage IGBT with optional Diode

VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultr

文件：77.18 Kbytes 页数：4 Pages

IXYS

艾赛斯