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K20N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

KGF20N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

KGF20N60PA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

MGP20N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficie

MotorolaMotorola, Inc

摩托罗拉

MGP20N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGW20N60D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托罗拉

MHF20N60CT

600VSiliconN-ChannelPowerMOSFET

MSAFX20N60A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastbodydiode •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Reversepolarityavailableuponrequest

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSW20N60

500VN-ChannelMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

NCE20N60

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE20N60F

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

P20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

PCFC20N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PSM20N60CT

20A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

PSM20N60CTB

20A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

PSM20N60CTF

20A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

PSM20N60PT

20A600VSingleN-ChannelPowerMOSFET

PFCPFC Device Inc.

PFC

RM20N60LD

N-ChannelEnhancementModePowerMOSFET

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

SD20N60

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SD20N60

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    FGH20N60SFDTU

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • IGBT 类型:

    场截止

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.8V @ 15V,20A

  • 开关能量:

    370µJ(开),160µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    13ns/90ns

  • 测试条件:

    400V,20A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247-3

  • 描述:

    IGBT FIELD STOP 600V 40A TO247-3

供应商型号品牌批号封装库存备注价格
ON
22+
TO-247
12680
询价
ON
22+
TO-247-3
6000
原装正品可支持验货,欢迎咨询
询价
onsemi/安森美
新批次
TO-247
4500
询价
onsemi
24+
TO-247-3
30000
晶体管-分立半导体产品-原装正品
询价
FAILCHILD
21+
TO-247
3000
专营原装正品现货,当天发货,可开发票!
询价
仙童
24+
NA
6800
询价
ON
22+
TO-247
50
原装现正品可看现货
询价
ON
23+
SOT-23-3
8000
只做原装正品,假一罚十
询价
ON
2023
IJBT
2000
全新、原装
询价
ON(安森美)
2023+
TO-247-3L
4550
全新原装正品
询价
更多FGH20N60SFDTU供应商 更新时间2024-6-5 15:40:00