Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides low on–voltage which results in efficient operation at

文件：120.68 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficie

文件：120.01 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

文件：246.08 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

600V Silicon N-Channel Power MOSFET

文件：2.68645 Mbytes 页数：8 Pages

CITC

竹懋科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

文件：48.16 Kbytes 页数：2 Pages

MICROSEMI

美高森美