Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

文件：246.08 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

恩XP

600V Silicon N-Channel Power MOSFET

文件：2.68645 Mbytes 页数：8 Pages

CITC

竹懋科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features • Ultrafast body diode • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request

文件：48.16 Kbytes 页数：2 Pages

Microsemi

美高森美

500V N-Channel MOSFET

文件：480.56 Kbytes 页数：4 Pages

BWTECH