丝印：PSM20N60PT；Package：TO-247AB；20A 600V Single N-Channel Power MOSFET

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PFC

节能元件

场效应电晶体

PFC

节能元件

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general

文件：806.53 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

N-CHANNEL IGBT

FEATURES  Low gate charge  Trench FS Technology,  saturation voltage: VCE(sat), typ = 1.6V,IC= 20A and TC = 25°C APPLICATIONS  General purpose inverters  UPS

文件：494.23 Kbytes 页数：8 Pages

GWSEMI

唯圣电子

IGBT

Features  600V,20A  VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA General Description trench IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS,

文件：471.1 Kbytes 页数：3 Pages

GWSEMI

唯圣电子