Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：321.44 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：K20N60；Package：PG-TO-247-3；Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：321.44 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：K20N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：244.07 Kbytes 页数：10 Pages

TOSHIBA

东芝

High speed switching

文件：1.53113 Mbytes 页数：8 Pages

KEC

KEC(Korea Electronics)

High speed switching

文件：1.41916 Mbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. It also provides fast switching charac teristics and results in efficie

文件：120.01 Kbytes 页数：6 Pages

Motorola

摩托罗拉