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IXGM20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Integrated Circuits Division

IXGM20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Integrated Circuits Division

IXGP20N60B

HiPerFASTTMIGBT

IXYS

IXYS Integrated Circuits Division

IXGT20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

IXKC20N60C

CoolMOSPowerMOSFETinISOPLUS220Package

CoolMOS™PowerMOSFETinISOPLUS220™Package ElectricallyIsolatedBackSurface N-ChannelEnhancementMode LowRDS(on),SuperjunctionMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •

IXYS

IXYS Integrated Circuits Division

IXKC20N60C

iscN-ChannelMOSFETTransistor

•FEATURES •Highpowerdissipation •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverters •HighCurrentSwitchingApplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH20N60

MegaMOSFET

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTH20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTM20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTM20N60

MegaMOSFET

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

JCS20N60ANH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60CAH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60CAH-O-CA-N-B

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH-O-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60FH-O-F-N-B

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

JCS20N60FH-R-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60WH

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JCS20N60WH-O-W-N-B

Highefficiencyswitchmodepowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JMP20N60A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江苏捷捷微电子股份有限公司

PDF上传者:深圳市溢航科技有限公司

产品属性

  • 产品编号:

    FGH20N60SFDTU

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • IGBT 类型:

    场截止

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.8V @ 15V,20A

  • 开关能量:

    370µJ(开),160µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    13ns/90ns

  • 测试条件:

    400V,20A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247-3

  • 描述:

    IGBT FIELD STOP 600V 40A TO247-3

供应商型号品牌批号封装库存备注价格
ON
22+
TO-247
12680
询价
ON
22+
TO-247-3
6000
原装正品可支持验货,欢迎咨询
询价
onsemi/安森美
新批次
TO-247
4500
询价
onsemi
24+
TO-247-3
30000
晶体管-分立半导体产品-原装正品
询价
FAILCHILD
21+
TO-247
3000
专营原装正品现货,当天发货,可开发票!
询价
仙童
20+
NA
6800
询价
ON
22+
TO-247
50
原装现正品可看现货
询价
ON
23+
SOT-23-3
8000
只做原装正品,假一罚十
询价
ON
2023
IJBT
2000
全新、原装
询价
ON(安森美)
2023+
TO-247-3L
4550
全新原装正品
询价
更多FGH20N60SFDTU供应商 更新时间2024-5-24 16:43:00