首页 >IXGT20N60B>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXGT20N60B | HiPerFAST IGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS | |
HiPerFAST IGBT with Diode VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin | IXYS IXYS Integrated Circuits Division | IXYS | ||
包装：管件 封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 150W TO268 | IXYS IXYS Integrated Circuits Division | IXYS | ||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | IXYS | ||
HITACHIEncapsulation,DIP16 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Usingnovelfield−stopIGBTtechnology Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
详细参数
- 型号：
IXGT20N60B
- 功能描述：
IGBT 40A 600V TO-268
- RoHS：
是
- 类别：
分离式半导体产品 >> IGBT - 单路
- 系列：
HiPerFAST™
- 标准包装：
30
- 系列：
GenX3™ IGBT
- 类型：
PT 电压 -
- 集电极发射极击穿（最大）：
1200V Vge,
- Ic时的最大Vce（开）：
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）：
200A 功率 -
- 最大：
830W
- 输入类型：
标准
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商设备封装：
PLUS247?-3
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
19+ |
TO-268 |
56800 |
只卖原装正品!价格超越代理!可开增值税发票! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-268 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO268 |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-268 |
6000 |
原装正品，支持实单 |
询价 | ||
IXYS |
2022+ |
TO-268 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS/艾赛斯 |
22+ |
TO-268 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-268 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IXYS |
24+ |
TO-268-3,D?Pak(2 引线 + 接片 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
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