Ultra-Low VCE(sat) IGBT

Features • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor speed control • DC servo and robot

文件：95.92 Kbytes 页数：4 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 300W TO268

IXYS

艾赛斯

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mo

文件：579.55 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFASTTM IGBT C2-Class High Speed IGBTs

HiPerFAST™ IGBT C2-Class High Speed IGBTs Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power suppl

文件：584.07 Kbytes 页数：5 Pages

IXYS

艾赛斯

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.9V@IC=60A · Very high frequency IGBT · High current handling capability APPLICATIONS · PFC circuits · Switched-mode and resonant-modepower supplies · AC motor speed control

文件：334.36 Kbytes 页数：2 Pages

ISC

无锡固电

GenX3 600V IGBTs with Diode

High Speed PT IGBTs for 40-100kHz switching Features • Optimized for Low Switching Losses • Square RBSOA • High Avalanche Capability • Anti-Parallel Ultra Fast Diode • International Standard Packages Advantages • High Power Density • Low Gate Drive Requirement Applications • High Freque

文件：243.8 Kbytes 页数：7 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

PT 高频IGBT

• 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 500W TO268

IXYS

艾赛斯