PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFAST IGBT Lightspeed Series

文件：148.87 Kbytes 页数：4 Pages

IXYS

艾赛斯

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 900V 24A 100W PLUS247

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 900V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.9Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations

文件：372.38 Kbytes 页数：2 Pages

ISC

无锡固电

MegaMOS FET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：102.81 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：302.97 Kbytes 页数：2 Pages

ISC

无锡固电