CoolMOS Power MOSFET in ISOPLUS220 Package

CoolMOS™ Power MOSFET in ISOPLUS220™ Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation •

文件：520.97 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • High power dissipation • Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Switching Applications

文件：305.73 Kbytes 页数：2 Pages

ISC

无锡固电

N通道超级结MOSFET

• 硅片固定在直接敷铜基板上\n• 第3代CoolMOS™\n功率MOSFET\n•增强的总功率密度\n•低热阻;

Littelfuse

力特

MegaMOS FET

MegaMOS™FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：105.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：371.77 Kbytes 页数：2 Pages

ISC

无锡固电

MegaMOS FET

MegaMOS™FET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

文件：105.52 Kbytes 页数：4 Pages

IXYS

艾赛斯